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positive channel Metal Oxide Semiconductor
Generally, it is a metal-oxide-semiconductor field-effect transistor, or a metal-insulator (insulator) -semiconductor. G: gate gate; S: source source; D: drain drain. The source (source) and drain (drain) of the MOS tube can be switched, and they are both N-type regions formed in the P-type backgate. In most cases, the two regions are the same, and even if the two ends are switched, the performance of the device will not be affected.
